Solid-state ion exchange is a synthetic method that allows for the replacement of ions in a crystal structure without disrupting the overall lattice framework. This approach enables the formation of new compounds that are difficult to obtain through conventional high-temperature synthesis, including metastable phases and materials with unique functionalities. I consider this method a powerful tool for discovering new materials. My research combines experimental work with first-principles calculations, and I have reported the following key achievements:
Discovery of the oxide semiconductor β-CuGaO2 with a direct band gap of 1.5 eV, suitable for solar cell applications
Synthesis paper (2014) Computational paper (2016) Thin-film paper(2017)
Development of a method to predict the feasibility of ion-exchange reactions using first-principles calculations
Press release (2024) Paper (2024)
Demonstration that new reaction pathways can be discovered by exploring novel ion sources
Paper (2025)
Tin sulfide (SnS) is a compound semiconductor composed of earth-abundant and non-toxic elements, making it a promising candidate for next-generation, environmentally friendly solar cells. Since SnS typically shows p-type conductivity, research so far has focused on heterojunction solar cells combining p-type SnS with n-type materials. However, I aim to realize higher-efficiency homojunction SnS solar cells by joining p-type and n-type SnS layers. To that end, I have been working on the development of n-type SnS and related investigations, as outlined below:
Pioneered the realization of n-type SnS thin films by controlling sulfur deficiency
Press release (2021) Paper (2021) Review (2022)
Reported the world's first homojunction SnS solar cell using n-type and p-type single crystals of SnS
Press release (2021) Paper (2021)
Elucidated in detail how slight deviations in the Sn/S composition ratio affect the electrical properties and morphology of SnS
Press release (2025) Paper (2025)
Sulfide compounds are promising for a wide range of applications, including solar cells, transistors, and solid electrolytes. However, the fabrication of high-quality sulfide thin films has traditionally required the use of highly toxic hydrogen sulfide (H2S) gas. In this research, I am developing a new deposition technique that enables the safe and versatile synthesis of various sulfide thin films using sulfur plasma, which supplies highly reactive sulfur species without relying on H2S at all
Demonstrated that a variety of sulfide thin films can be universally synthesized using an H₂S-free process based on sulfur plasma
Youtube PV
Reported that the high energy of sulfur plasma enables the formation of highly crystalline thin films even on low-temperature substrates
Paper (2025)
To apply a material to a functional device, it is essential to understand its electronic structure, both in the bulk and at interfaces. I have employed experimental techniques such as X-ray photoelectron spectroscopy (XPS) and angle-resolved photoelectron spectroscopy (ARPES) to directly probe these electronic structures. The following are some of the major results:
Direct evaluation of the band structure and dispersion of sulfide-based thermoelectric materials using synchrotron-based ARPES
Paper (2022) Paper (2022) Paper (2023)
In-situ XPS analysis of interface electronic structures involving single-crystalline SnS, demonstrating a wide tunability of the Fermi level
Press release (2022) Paper (2022)
XPS analysis of the β-CuGaO₂/ZnO interface, confirming that it forms a functional junction suitable for photovoltaic applications
Paper (2021)